Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics
نویسندگان
چکیده
منابع مشابه
Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon ph...
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The silicon photonics field is advancing rapidly, with many new devices demonstrated recently [1]. Demonstrations have shown significantly improved performance that is now approaching that of devices on native InP substrates. In addition to the many passive devices, including AWGs, isolators, and circulators, active devices including lasers, modulators, amplifiers and photodetectors (Fig. 1) ar...
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We demonstrate one-dimensional nanobeam photonic bandedge lasers with InGaAsP quantum wells at room temperature from the lowest dielectric band of photonic crystal nanobeam waveguides. The incident optical power at threshold is 0.6 mW (effectively ~18 μW). To confirm the lasing from the dielectric bandedge, the polarization and the photoluminescent spectra are taken from nanobeams of varying la...
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ژورنال
عنوان ژورنال: Optics Letters
سال: 2013
ISSN: 0146-9592,1539-4794
DOI: 10.1364/ol.38.004656